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| microwave power gaas fet microwave semiconductor TPM2323-60 technical data features ? ? high power ? partially matched type p1db=48.0dbm at 2.4ghz ? high gain ? hermetically sealed package g1db=10.0db at 2.4ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 47.0 48.0 ? power gain at 1db gain compression point g 1db db 9.0 10.0 ? drain current i ds1 a ? 12.0 15.0 power added efficiency add v ds = 12 v f = 2.4ghz idsset ? 8.0a % ? 39 ? channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 100 recommended gate resistance (rg) : rg = 30 (max.) electrical character istics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 12.0a s ? 20.0 ? pinch-off voltage v gsoff v ds = 3v i ds = 300ma v -1.0 -1.8 -3.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 38 ? gate-source breakdown voltage v gso i gs = -10.0ma v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 0.6 0.8 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. may 2007
2 TPM2323-60 absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 26.0 total power dissipation (tc= 25 c ) p t w 187.5 channel temperature t ch c 175 storage t stg c -65 +175 package outline (2-16g1b) unit in mm c gate d source e drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c. 3 TPM2323-60 output power (pout) vs. frequency vds=12v ids ? 12.0a pin=38.0dbm frequency(ghz) output power(pout) vs. input power(pin) freq.=2.4ghz vds=12v ids ? 12a pout add pin(dbm) rf performance 2.1 2.2 2.3 2.4 2.5 50 48 46 44 42 40 38 36 34 pout(dbm) 70 60 50 40 30 20 10 0 add(%) 24 28 32 36 40 44 48 47 46 45 44 pout(dbm) 4 TPM2323-60 power dissipation(pt) vs. case temperature(tc) tc( c ) 0 pt(w) 200 150 100 50 0 40 80 120 160 200 drawing of recommenda ble matching network |
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